Behavioral Modeling of Flash Memories
نویسندگان
چکیده
منابع مشابه
A behavioral model of unipolar resistive RAMs and its application to HSPICE integration
Resistive RAMs (ReRAMs), where the resistance is changed by voltage and current biases, have extensively been studied to develop high-speed and large-capacity nonvolatile memories as well as functional nonvolatile memories. ReRAMs are so far intended for use as alternatives to contemporary flash memories, but the applications are not limited to Boolean alternatives. Although physical mechanisms...
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تاریخ انتشار 2017